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11/1/11 www.irf.com 1 hexfet power mosfet s d g 96395a AUIRFS3107-7P gds gate drain source
description specifically designed for automotive applications, thishexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per siliconarea. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. features advanced process technology ultra low on-resistance enhanced dv/dt and di/dt capability 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * automotive grade hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v dss 75v r ds(on) typ. 2.1m max. 2.6m i d (silicon limited) 260a i d (package limited) 240a absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, vgs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) thermal resistance parameter typ. max. units r jc junction-to-case CCC 0.40 c/w r ja junction-to-ambient (pcb mount) CCC 40 c 370 13 -55 to + 175 20 2.5 300 max. 260 190 1060 240320 see fig. 14, 15, 22a, 22b downloaded from: http:///

2 www.irf.com calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 240a. note that current limitations arising from heating of the device leads may occur withsome lead mounting arrangements. repetitive rating; pulse width limited by max. junction temperature. limited by t jmax , starting t j = 25c, l = 0.026mh r g = 25 , i as = 160a, v gs =10v. part not recommended for use above this value . i sd 160a, di/dt 1420a/ s, v dd v (br)dss , t j 175c. s d g pulse width 400 s; duty cycle 2%. c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . when mounted on 1" square pcb (fr-4 or g-10 material). for recom mended footprint and soldering echniques refer to application note #an-994.
!"#$ jc %&' ($ static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 75 CCC CCC v v (br)dss / t j breakdown voltage temp. coefficient CCC 0.083 CCC v/c r ds(on) static drain-to-source on-resistance CCC 2.1 2.6 m v gs(th) gate threshold voltage 2.0 CCC 4.0 v gfs forward transconductance 260 CCC CCC s r g internal gate resistance CCC 2.1 CCC i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC 160 240 q gs gate-to-source charge CCC 38 CCC q gd gate-to-drain ("miller") charge CCC 57 CCC q sync total gate charge sync. (q g - q gd ) CCC 103 CCC t d(on) turn-on delay time CCC 17 CCC t r rise time CCC 80 CCC t d(off) turn-off delay time CCC 100 CCC t f fall time CCC 64 CCC c iss input capacitance CCC 9200 CCC c oss output capacitance CCC 850 CCC c rss reverse transfer capacitance CCC 400 CCC pf c oss eff. (er) effective output capacitance (energy related) CCC 1150 CCC c oss eff. (tr) effective output capacitance (time related) CCC 1500 CCC diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 260 (body diode) i sm pulsed source current CCC CCC 1060 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 52 CCC t j = 25c v r = 64v, CCC 63 CCC t j = 125c i f = 160a q rr reverse recovery charge CCC 110 CCC nc t j = 25c di/dt = 100a/ s CCC 160 CCC t j = 125c i rrm reverse recovery current CCC 3.8 CCC a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) nc ns a ns conditions i d = 160a v gs = 20v i d = 160a v gs = -20v v ds = 38v r g = 2.7 v gs = 10v v dd = 49v i d = 160a, v ds =0v, v gs = 10v v ds = v gs , i d = 250 a v ds = 75v, v gs = 0v v ds = 75v, v gs = 0v, t j = 125c v ds = 25v, i d = 160a conditions v gs = 0v, i d = 250 a reference to 25c, i d = 5ma v gs = 10v, i d = 160a v gs = 0v, v ds = 0v to 60v t j = 25c, i s = 160a, v gs = 0v integral reverse p-n junction diode. mosfet symbol showing the conditions v gs = 0v, v ds = 0v to 60v v gs = 10v v gs = 0v v ds = 50v ? = 1.0mhz downloaded from: http:///

www.irf.com 3 qualification information ? 7l-d 2 pak msl1 rohs compliant yes esd machine model class m4(+/- 800v ) ??? (per aec-q101-002) human body model class h3a(+/- 6000v ) ??? (per aec-q101-001) qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5(+/- 2000v ) ??? (per aec-q101-005) moisture sensitivity level ? qualification standards can be found at international rectifiers web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage downloaded from: http:///

4 www.irf.com fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 60 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 4.8v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 4.8v bottom 4.5v 60 s pulse width tj = 25c 4.5v 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 160a v gs = 10v 0 25 50 75 100 125 150 175 200 225 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v i d = 160a 1 10 100 1000 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss downloaded from: http:///

www.irf.com 5 fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage fig 7. typical source-drain diode forward voltage fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. draincurrent 0.0 0.5 1.0 1.5 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 70 75 80 85 90 95 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5ma -10 0 10 20 30 40 50 60 70 80 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e n e r g y ( j ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 28a 50a bottom 160a 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100 sec 1msec 10msec dc 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) limited by package downloaded from: http:///

6 www.irf.com fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs.pulsewidth fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far inexcess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 22a, 22b.4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15).t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.01083 0.000010.05878 0.000086 0.15777 0.001565 0.17478 0.011192 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 160a downloaded from: http:///

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fig 16. threshold voltage vs. temperature

-75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/ s) 0 5 10 15 20 25 30 i r r ( a ) i f = 160a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 100 200 300 400 500 600 700 800 900 1000 q r r ( a ) i f = 106a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 0 5 10 15 20 25 30 i r r ( a ) i f = 106a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 200 300 400 500 600 700 800 900 1000 q r r ( a ) i f = 160a v r = 64v t j = 25c t j = 125c downloaded from: http:///

8 www.irf.com fig 23a. switching time test circuit fig 23b. switching time waveforms fig 22b. unclamped inductive waveforms fig 22a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 24a. gate charge test circuit fig 24b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 21.

for n-channel hexfet power mosfets

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ) *+),-./-%%/ + - + + + - - - ) ?

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www.irf.com 9 d 2 pak - 7 pin package outline dimensions are shown in millimeters (inches)

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10 www.irf.com d 2 pak - 7 pin tape and reel

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www.irf.com 11 ordering information base part package type standard pack complete part number form quantity AUIRFS3107-7P d2pak -7pin tube 75 AUIRFS3107-7P tape and reel left 800 auirfs3107-7trl tape and reel right 800 auirfs3107-7trr downloaded from: http:///

12 www.irf.com
unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reservethe right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterati ons is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions.resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive businesspractice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any suchunintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product.only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military gr ade products, is solely at the buyers own risk and that they are solely responsible for compliance with all legal and regulatoryrequirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au.buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

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